EP2S60F1020I4N

IC STRATIX II FPGA 60K 1020-FBGA

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SeekIC No. : 003506354 Detail

EP2S60F1020I4N: IC STRATIX II FPGA 60K 1020-FBGA

floor Price/Ceiling Price

US $ 864~864 / Piece | Get Latest Price
Part Number:
EP2S60F1020I4N
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • Unit Price
  • $864
  • Processing time
  • 15 Days
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Upload time: 2024/11/22

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Product Details

Quick Details

Series: Stratix® II Manufacturer: Altera
Number of LABs/CLBs: 3022 Number of Logic Elements/Cells: 60440
Total RAM Bits: 2544192 Number of I /O: 718
Operating Supply Voltage : 22 V Number of Gates: -
Voltage - Supply: 1.15 V ~ 1.25 V Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C Package / Case: 1020-BBGA    

Description

Number of Gates: -
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Manufacturer: Altera
Voltage - Supply: 1.15 V ~ 1.25 V
Series: Stratix® II
Number of LABs/CLBs: 3022
Number of Logic Elements/Cells: 60440
Total RAM Bits: 2544192
Package / Case: 1020-BBGA
Supplier Device Package: 1020-FBGA (33x33)
Number of I /O: 718


Description

The EP2S60F1020I4N is one member of the Stratix® II FPGA family which is based on a 1.2-V, 90-nm, all-layer copper SRAM process and features a new logic structure that maximizes performance. And this device offers up to 9 Mbits of on-chip, TriMatrix™ memory for demanding, memory intensive applications and has up to 96 DSP blocks with up to 384 (18-bit x 18-bit) multipliers for efficient implementation of high performance filters and other DSP functions.

Features of the EP2S60F1020I4N are:(1)15,600 to 179,400 equivalent LEs; (2)Up to 9,383,040 RAM bits (1,172,880 bytes) available without reducing logic resources; (3)TriMatrix memory consisting of three RAM block sizes to implement true dual-port memory and first-in first-out (FIFO) buffers; (4)Up to 16 global clocks with 24 clocking resources per device region; (5)Support for design security using configuration bitstream encryption; (6)Support for high-speed external memory, including DDR and DDR2 SDRAM, RLDRAM II, QDR II SRAM, and SDR SDRAM Support for remote configuration updates; (7)Support for numerous single-ended and differential I/O standards; (8)High-speed differential I/O support with DPA circuitry for 1-Gbps performance.

The absolute maximum ratings of the EP2S60F1020I4N can be summarized as:(1)Supply voltage: -0.5 to 1.8 V;(2)Analog power supply for PLLs: -0.5 to 1.8 V;(3)Digital power supply for PLLs: -0.5 to 1.8 V;(4)DC input voltage: -0.5 to 4.6 V;(5)DC output current, per pin: -25 to 40 mA;(6)Storage temperature: -65 to 150 °C;(7)Junction temperature: -55 to 125 °C. If you want to know more information such as the electrical characteristics about the EP2S60F1020I4N, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationEP2S60F1020I4N
VendorAltera
CategoryIntegrated Circuits (ICs)
Number of Gates-
Number of I /O718
Number of Registers-
Number of Logic Blocks/Elements60440
Delay Time-
Package / Case1020-FBGA
Operating Temperature-40°C ~ 100°C
Voltage - Supply1.14 V ~ 3.465 V
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names EP2S60F1020I4N
EP2S60F1020I4N
544 1904 ND
5441904ND
544-1904



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