EN29SL800

Features:

• Single power supply operation
- Full voltage range:1.65-2.2 volt for read and
write operations.
- Ideal for battery-powered applications.
• Manufactured on 0.18 m triple-metal double
poly triple-well CMOS Flash Technology
• High performance
- Access times as fast as 70 ns
• Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 0.2 A typical standby current
• Flexible Sector Architecture:
- One 16-Kbyte, two 8-Kbyte, one 32-Kbyte,
and fifteen 64-Kbyte sectors (byte mode)
- One 8-Kword, two 4-Kword, one 16-Kword
and fifteen 32-Kword sectors (word mode)
• Sector protection:
- Hardware locking of sectors to prevent program or erase operations within individual sectors
  Additionally, temporary Sector Unprotect allows code changes in previously locked sectors.
• High performance program/erase speed
- Byte/Word program time: 5s/7s typical
- Sector erase time: 500ms typical
• JEDEC Standard Embedded Erase and Program Algorithms
• JEDEC standard DATA# polling and toggle bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode
• Low Vcc write inhibit < 1.2V
• Minimum 1,000K endurance cycle
• Package Options
- 48-pin TSOP (Type 1)
- 48-ball 6mm x 8mm FBGA
• Commercial and industrial temperature Range


Pinout




Specifications

Parameter		Value	Unit
Storage Temperature		-65 to +125	°C
Plastic Packages		-65 to +125	°C
Ambient Temperature With Power Applied		-55 to +125	°C
Output Short Circuit Current1		200	mA
Voltage with Respect to Ground	A9, OE#, Reset# 2	-0.5 to +11.5	V
	All other pins 3	-0.5 to Vcc+0.5	V
	Vcc	-0.5 to +4.0	V

Description

The EN29SL800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 5s. The EN29SL800 features 1.8V voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT statements in high-performance microprocessor systems.

The EN29SL800 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 1,000K program/erase cycles on each sector.