EN29LV641H70R

• Single power supply operation- Full voltage range: 2.7 to 3.6 volts for read,erase and program operations
• Low power consumption (typical values at 5MHz)- 9 mA typical active read current- 20 mA typical program/erase current- Less than 1 A current in standby or automaticsleep mode.
• JEDEC standards compatible- Pinout and software compatible with singlepowersupply Flash standard
• Manufactured on 0.18m processtechnology
• Flexible Sector Architecture:- One hundred and twenty-eight 32K-Wordsectors.
• Minimum 100K program/erase endurancecycles.
• High performance for program and erase- Word program time: 8s typical- Sector Erase time: 500ms typical- Chip Erase time: 64s typical
• Package Options- 48-pin TSOP- 63 ball 11mm x 12mm FBGA

The EN29LV641H/L / EN29LV640U is a 64-Megabit (4,194,304x16), electrically erasable, read/writenon-volatile flash memory. Any word can be programmed typically in 8s. This device is entirelycommand set compatible with the JEDEC single-power-supply Flash standard.

The EN29LV641H/L / EN29LV640U is designed to allow either single Sector or full Chip eraseoperation, where each Sector Group can be protected against program/erase operations ortemporarily unprotected to erase or program. The device can sustain a minimum of 100Kprogram/erase cycles on each Sector.