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EN29LV641H

Features: • Single power supply operation - Full voltage range: 2.7 to 3.6 volts for read, erase and program operations • Low power consumption (typical values at 5 MHz) - 9 mA typical active read current - 20 mA typical program/erase current - Less than 1 µA current in sta...

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SeekIC No. : 004336588 Detail

EN29LV641H: Features: • Single power supply operation - Full voltage range: 2.7 to 3.6 volts for read, erase and program operations • Low power consumption (typical values at 5 MHz) - 9 mA typic...

EN29LV641H Data Sheet

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Part Number:
EN29LV641H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

•  Single power supply operation
    -  Full voltage range: 2.7 to 3.6 volts for read,
       erase and program operations
 
•   Low power consumption (typical values at 5
     MHz)
     -  9 mA typical active read current
     -  20 mA typical program/erase current
     -  Less than 1 µA current in standby or automatic
        sleep mode.
 
•  JEDEC standards compatible
    -  Pinout and software compatible with single-
       power supply Flash standard
 
• Manufactured on 0.18m process
   technology
 
• Flexible Sector Architecture:
   -  One hundred and twenty-eight 32K-Word
       sectors.
 
• Minimum 100K program/erase endurance
   cycles. 
• High performance for program and erase 
   -  Word program time:  8µs typical
   -  Sector Erase time: 500ms typical
   -  Chip Erase time: 64s typical  
• Package Options
   -  48-pin TSOP 
   -  63 ball 11mm x 12mm FBGA 
 


Pinout

Connection Diagram


Description

The EN29LV641H/L / EN29LV640U is a 64-Megabit (4,194,304x16), electrically erasable, read/write non-volatile flash memory. Any word can be programmed typically in 8µs. This device is entirely  command set compatible with the JEDEC single-power-supply Flash standard. 

The EN29LV641H/L / EN29LV640U is designed to allow either single Sector or full Chip erase operation, where each Sector Group can be protected against program/erase operations or temporarily unprotected to erase or program.  The device can sustain a minimum of 100K program/erase cycles on each Sector.




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