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EN29LV160J

Features: ` 3.0V, single power supply operation- Minimizes system level power requirements` Manufactured on 0.28 m process technology` High performance- Access times as fast as 70 ns` Low power consumption (typical values at 5MHz)- 7 mA typical active read current- 15 mA typical program/erase curr...

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SeekIC No. : 004336580 Detail

EN29LV160J: Features: ` 3.0V, single power supply operation- Minimizes system level power requirements` Manufactured on 0.28 m process technology` High performance- Access times as fast as 70 ns` Low power cons...

EN29LV160J Data Sheet

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Part Number:
EN29LV160J
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

`  3.0V, single power supply operation
- Minimizes system level power requirements
`  Manufactured on 0.28 m process technology
`  High performance
- Access times as fast as 70 ns
`  Low power consumption (typical values at 5MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1 mA typical standby current (standard access time to active mode)
`  Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword and thirty-one 32 Kword sectors (word mode)
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent program or erase operations within individual sectors
Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
`  High performance program/erase speed
- Byte program time: 8s typical
- Sector erase time: 200ms typical
- Chip erase time: 3.5s typical
`  JEDEC Standard program and erase commands
`  JEDEC standard DATA polling and toggle bits feature
`  Single Sector and Chip Erase
`  Sector Unprotect Mode
`  Embedded Erase and Program Algorithms
`  Erase Suspend / Resume modes:
     Read and program another Sector during Erase Suspend Mode
`  0.28 m double-metal double-poly triple-well CMOS Flash Technology
`  Low Vcc write inhibit < 2.5V
`  >100K program/erase endurance cycle
`  48-pin TSOP (Type 1)
`  Commercial Temperature Range


Pinout

Connection Diagram


Description

The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10s. The EN29LV160J features 3.0V voltage read and write operation, with access times as fast as 55ns to eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV160J has separate Output Enable (OE), Chip Enable (CE), and Write Enable (WE) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.




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