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EN29F512

Features: 5.0V operation for read/write/erase operationsFast Read Access Time 45ns, 55ns, 70ns, and 90nsSector Architecture: 4 uniform sectors of 16Kbytes each Supports full chip erase Individual sector erase supported Sector protection: Hardware locking of sectors to prevent program or erase oper...

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SeekIC No. : 004336577 Detail

EN29F512: Features: 5.0V operation for read/write/erase operationsFast Read Access Time 45ns, 55ns, 70ns, and 90nsSector Architecture: 4 uniform sectors of 16Kbytes each Supports full chip erase Individual se...

EN29F512 Data Sheet

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Part Number:
EN29F512
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

5.0V operation for read/write/erase operations
Fast Read Access Time
    45ns, 55ns, 70ns, and 90ns
Sector Architecture:
    4 uniform sectors of 16Kbytes each
    Supports full chip erase
    Individual sector erase supported
    Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors
High performance program/erase speed
    Byte program time: 7µs typical
    Sector erase time: 300ms typical
    Chip erase time: 1.5s typical
Low Standby Current
    1µA CMOS standby current-typical
    1mA TTL standby current
Low Power Active Current
    12mA typical active read current
    30mA program/erase current
JEDEC Standard program and erase commands
JEDEC standard DATA polling and toggle bits feature
Single Sector and Chip Erase
Sector Unprotect Mode
Embedded Erase and Program Algorithms
Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode
0.23 µm triple-metal double-poly triple-well CMOS Flash Technology
Low Vcc write inhibit < 3.2V
100K endurance cycle
Package Options
    32-pin PDIP
    32-pin PLCC
    32-pin 8mm x 20mm TSOP (Type 1)
    32-pin 8mm x 14mm TSOP (Type 1)
Commercial and Industrial Temperature Ranges


Pinout

Connection Diagram


Specifications

Storage Temperature Plastic Packages . . . . . . . . 65°C to +125°C
Ambient Temperature with Power Applied. . . . . .  55°C to +125°C
Voltage with Respect to Ground
    VCC (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5 V to 7.0 V
    A9, OE# (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .  0.5 V to 11.5 V
    All other pins (Note 1) . . . . . . . . . . . . . . . . . . .0.5 V to Vcc+0.5V
Output Short Circuit Current (Note 3) . . . . . . . . . . . . . . . . . .200 mA


Description

The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29F512 has separate Output Enable (OE), Chip Enable (CE), and Write Enable (WE) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.




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