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EN29F080

Features: ` 5.0V ± 10%, single power supply operation -Minimizes system level power requirements` Manufactured on 0.35 m process technology` High performance - Access times as fast as 45 ns` Low power consumption - 25 mA typical active read current - 30 mA typical program/erase current - 1 A typic...

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SeekIC No. : 004336576 Detail

EN29F080: Features: ` 5.0V ± 10%, single power supply operation -Minimizes system level power requirements` Manufactured on 0.35 m process technology` High performance - Access times as fast as 45 ns` Low pow...

EN29F080 Data Sheet

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Part Number:
EN29F080
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

`  5.0V ± 10%, single power supply operation 
- Minimizes system level power requirements
`  Manufactured on 0.35 m process technology
`  High performance
   - Access times as fast as 45 ns
`  Low power consumption
   - 25 mA typical active read current
   - 30 mA typical program/erase current
   - 1 A typical standby current (standard access time to active mode)
`  Flexible Sector Architecture:
   - 16 uniform sectors of 64Kbytes each
   - Supports full chip erase
   - Individual sector erase supported
   - Group sector protection:
     Hardware method of locking of sector groups to prevent any program or erase operations within that sector group
Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors
`  High performance program/erase speed
   - Byte program time: 10s typical
   - Sector erase time: 500ms typical
   - Chip erase time: 16s typical
`  Low Standby Current
   - 1A CMOS standby current-typical
   - 1mA TTL standby current
`  Low Power Active Current
   - 30mA active read current
   - 30mA program/erase current
`  JEDEC Standard program and erase commands
`  JEDEC standard DATA polling and toggle bits feature
`  Sector Unprotect Mode
`  Embedded Erase and Program Algorithms
`  Erase Suspend / Resume modes:
   Read and program another Sector during
   Erase Suspend Mode
`  0.35 m double-metal double-poly triple-well CMOS Flash Technology
`  Low Vcc write inhibit 3.2V
`  >100K program/erase endurance cycle
`  Ready/Busy# output (RY/BY#)
   - Provides a hardware method for detecting program or erase cycle completion.
`  Hardware reset pin (Reset#)
   - Resets internal state machine to read mode


Pinout

Connection Diagram


Specifications

Parameter
Value
Unit
Storage Temperature
-65 to +125
Plastic Packages
-65 to +125
Ambient Temperature
With Power Applied
-55 to +125
Output Short Circuit Current1
200
mA
Voltage with Respect to Ground A9, OE#, Reset# 2
-0.5 to +11.5
V
All other pins 3
-0.5 to Vcc+0.5
V
Vcc
-0.5 to +7.0
V

Notes:
1. No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2. Minimum DC input voltage on A9, OE#, RESET# pins is 0.5V. During voltage transitions, A9, OE#, RESET# pins may
undershoot Vss to 1.0V for periods of up to 50ns and to 2.0V for periods of up to 20ns. See figure below. Maximum DC
input voltage on A9, OE#, and RESET# is 11.5V which may overshoot to 12.5V for periods up to 20ns.
3. Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, inputs may undershoot Vss to 1.0V for periods of up to 50ns and to 2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O pins is Vcc + 0.5 V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods up to 20ns. See figure below.
4. Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the device to the maximum rating values for extended periods of time may adversely affect the device reliability.


Description

The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10s. The EN29F080 features 5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29F080 has separate Output Enable (OE), Chip Enable (CE), and Write Enable (WE) controls, which eliminate bus contention issues. This device is designed to allow either single (or multiple) Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.




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