EN29F002N

Features:

  5.0V ± 10% for both read/write operation
  Read Access Time
 - 45ns, 55ns, 70ns, and 90ns
  Fast Read Access Time
- 70ns with Cload = 100pF
- 45ns, 55ns with Cload = 30pF
  Sector Architecture:
    One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors
  Boot Block Top/Bottom Programming
Architecture
  High performance program/erase speed
- Byte program time: 10µs typical
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical
  Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
  Low Power Active Current
- 30mA active read current
- 30mA program / erase current
  JEDEC Standard program and erase
commands
  JEDEC standard DATA polling and toggle bits feature
  Hardware RESET Pin (n/a for EN29F002N)
  Single Sector and Chip Erase
  Sector Protection / Temporary Sector Unprotect (RESET = VID)
  Sector Unprotect Mode
  Embedded Erase and Program Algorithms
  Erase Suspend / Resume modes:
Read and program another sector during Erase Suspend Mode
  0.4 µm double-metal double-poly triple-well CMOS Flash Technology
  Low Vcc write inhibit < 3.2V
  100K endurance cycle
  Package Options
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP (Type 1)
  Commercial and Industrial Temperature Ranges


Pinout




Specifications

Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . 65°C to +125°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . 55°C to +125°C
Voltage with Respect to Ground
 VCC (Note 1) . . . . . . . . . . . . . . . . . . . . 0.5 V to 7.0 V
   A9, OE# (Note 2) . . . . . . . . . . . . . . . 0.5 V to 11.5 V
All other pins (Note 1) . . . . . . . . . . . . 0.5 V to Vcc+0.5V
Output Short Circuit Current (Note 3) . . . . . . . . . 200 mA


Description

The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with
top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main
sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10µs. The EN29F002 /
EN29F002N features 5.0V voltage read and write operation. The access times are as fast as 45ns to eliminate
the need for WAIT states in high-performance microprocessor systems.

The EN29F002 / EN29F002N has separate Output Enable (OE), Chip Enable (CE), and Write Enable (WE) controls which eliminate bus contention issues. This device is designed to allow either single sector or full chip erase operation, where each sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each sector.