Transistors Bipolar (BJT) 100mA 60V Dual NPN
EMX1DXV6T5: Transistors Bipolar (BJT) 100mA 60V Dual NPN
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Single Board Computers EMX MODULE .net MICRO FRAMEWORK
Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 50 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 0.1 A |
DC Collector/Base Gain hfe Min : | 120 at 2 mA at 6 V | Configuration : | Dual |
Maximum Operating Frequency : | 180 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-563-6 |
Packaging : | Reel |
Rating |
Symbol |
Value |
Unit |
Collector-Base Voltage |
V(BR)CBO |
60 |
Vdc |
Collector-Emitter Voltage |
V(BR)CEO |
50 |
Vdc |
Emitter-Base Voltage |
V(BR)EBO |
7.0 |
Vdc |
Collector Current − Continuous |
IC |
100 |
mAdc |
This EMX1DXV6T5 NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium.