EMX1DXV6T1

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 50 V
Configuration : Dual
Maximum DC Collector Current : 0.1 A
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Frequency : 180 MHz
Package / Case : SOT-563
DC Collector/Base Gain hfe Min : 120 at 2 mA at 6 V


Features:

• Reduces Board Space
• High hFE, 210−460 (Typical)
• Low V_CE(sat) , < 0.5 V
• These are Pb−Free Devices


Specifications

Rating	Symbol	Value	Unit
Collector-Base Voltage	V(BR)CBO	60	Vdc
Collector-Emitter Voltage	V(BR)CEO	50	Vdc
Emitter-Base Voltage	V(BR)EBO	7.0	Vdc
Collector Current − Continuous	IC	100	mAdc

Description

This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium.

Parameters:

Technical/Catalog Information	EMX1DXV6T1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA
Frequency - Transistion	180MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-563
Packaging	Tape & Reel (TR)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	EMX1DXV6T1 EMX1DXV6T1