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EMT1DXV6T1G

Transistors Bipolar (BJT) 100mA 60V Dual PNP

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EMT1DXV6T1G: Transistors Bipolar (BJT) 100mA 60V Dual PNP

EMT1DXV6T1G Data Sheet

floor Price/Ceiling Price

US $ .08~.28 / Piece | Get Latest Price
Part Number:
EMT1DXV6T1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.28
  • $.16
  • $.13
  • $.08
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 120 at 1 mA at 6 V Configuration : Dual
Maximum Operating Frequency : 140 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-563
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Collector- Emitter Voltage VCEO Max : 60 V
Configuration : Dual
Maximum DC Collector Current : 0.1 A
Package / Case : SOT-563
Maximum Operating Frequency : 140 MHz
DC Collector/Base Gain hfe Min : 120 at 1 mA at 6 V


Parameters:

Technical/Catalog InformationEMT1DXV6T1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor Type2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)100mA
Power - Max500mW
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Frequency - Transistion140MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-563
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names EMT1DXV6T1G
EMT1DXV6T1G



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