Transistors Switching (Resistor Biased) 50V Dual BRT NPN
EMG2DXV5T5G: Transistors Switching (Resistor Biased) 50V Dual BRT NPN
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Configuration : | Dual Common Emitter | Transistor Polarity : | NPN | ||
Typical Input Resistor : | 47 KOhms | Typical Resistor Ratio : | 1 | ||
Mounting Style : | SMD/SMT | Package / Case : | SOT-553-5 | ||
Collector- Emitter Voltage VCEO Max : | 50 V | Continuous Collector Current : | 0.1 A | ||
Peak DC Collector Current : | 100 mA | Power Dissipation : | 230 mW | ||
Maximum Operating Temperature : | + 150 C | Packaging : | Reel |
Technical/Catalog Information | EMG2DXV5T5G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 338mW |
Resistor - Base (R1) (Ohms) | 10K |
Resistor - Emitter Base (R2) (Ohms) | 47K |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300A, 10mA |
Current - Collector Cutoff (Max) | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Frequency - Transistion | - |
Mounting Type | Surface Mount |
Package / Case | SOT-553-5 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | EMG2DXV5T5G EMG2DXV5T5G |