Transistors Bipolar (BJT) BRT Dual NPN & PNP
EMF5XV6T5G: Transistors Bipolar (BJT) BRT Dual NPN & PNP
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 50 V, 12 V |
Emitter- Base Voltage VEBO : | 6 V at TR 2 | Maximum DC Collector Current : | 0.1 A, 0.5 A |
DC Collector/Base Gain hfe Min : | 80 at 5 mA at 10 V | Configuration : | Dual |
Mounting Style : | SMD/SMT | Package / Case : | SOT-563 |
Packaging : | Reel |
Technical/Catalog Information | EMF5XV6T5G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | 1 NPN Prebiased, 1 PNP (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
Current - Collector (Ic) (Max) | 100mA, 1A |
Power - Max | 500mW |
Resistor - Base (R1) (Ohms) | 47K |
Resistor - Emitter Base (R2) (Ohms) | 47K |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300A, 10mA / 250mV @ 10mA, 200mA |
Current - Collector Cutoff (Max) | 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 270 @ 10mA, 2V |
Frequency - Transition | - |
Mounting Type | Surface Mount |
Package / Case | SOT-563 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | EMF5XV6T5G EMF5XV6T5G EMF5XV6T5GOSTR ND EMF5XV6T5GOSTRND EMF5XV6T5GOSTR |