Transistors Switching (Resistor Biased) 50V Dual Common Base
EMC5DXV5T1: Transistors Switching (Resistor Biased) 50V Dual Common Base
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Configuration : | Dual Common Base and Collector | Transistor Polarity : | NPN | ||
Typical Input Resistor : | 47 KOhms at NPN, 4.7 KOhms at PNP | Typical Resistor Ratio : | 1 at NPN, 0.47 at PNP | ||
Mounting Style : | SMD/SMT | Package / Case : | SOT-553-5 | ||
Collector- Emitter Voltage VCEO Max : | 50 V | Continuous Collector Current : | 0.1 A | ||
Peak DC Collector Current : | 100 mA | Power Dissipation : | 357 mW | ||
Maximum Operating Temperature : | + 150 C | Packaging : | Reel |
Rating |
Symbol |
Value |
Unit |
Collector-Base Voltage |
VCBO |
50 |
Vdc |
Collector-Emitter Voltage |
VCEO |
50 |
Vdc |
Collector Current |
IC |
100 |
mAdc |
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMC5DXV5T1 series, two complementary BRT devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space is at a premium.