MOSFET 2N-CH 30V .1A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.1 A |
Resistance Drain-Source RDS (on) : | 7 Ohms | Configuration : | Dual |
Mounting Style : | SMD/SMT | Package / Case : | EMT-6 |
Packaging : | Reel |
Technical/Catalog Information | EM6K1T2R |
Vendor | Rohm Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 100mA |
Rds On (Max) @ Id, Vgs | 8 Ohm @ 10mA, 4V |
Input Capacitance (Ciss) @ Vds | 13pF @ 5V |
Power - Max | 150mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | EMT6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | EM6K1T2R EM6K1T2R EM6K1T2RTR ND EM6K1T2RTRND EM6K1T2RTR |