EM637327

Features: · Fast access time from clock: 4.5/5.5/5.5/6 ns· Fast clock rate: 200/166/143/125 MHz· Fully synchronous operation· Internal pipelined architecture· Dual internal banks (512K x 32bit x 2bank)· Programmable Mode - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst T...

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EM637327 Picture
SeekIC No. : 004335988 Detail

EM637327: Features: · Fast access time from clock: 4.5/5.5/5.5/6 ns· Fast clock rate: 200/166/143/125 MHz· Fully synchronous operation· Internal pipelined architecture· Dual internal banks (512K x 32bit x 2ba...

floor Price/Ceiling Price

Part Number:
EM637327
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/11/21

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Product Details

Description



Features:

· Fast access time from clock: 4.5/5.5/5.5/6 ns
· Fast clock rate: 200/166/143/125 MHz
· Fully synchronous operation
· Internal pipelined architecture
· Dual internal banks (512K x 32bit x 2bank)
· Programmable Mode
    - CAS# Latency: 1, 2, or 3
    - Burst Length: 1, 2, 4, 8, or full page
    - Burst Type: interleaved or linear burst
    - Burst-Read-Single-Write
    - Load Color or Mask register
· Burst stop function
· Individual byte controlled by DQM0-3
· Block write and write-per-bit capability
· Auto Refresh and Self Refresh
· 2048 refresh cycles/32ms
· Single +3.3V ± 0.3V power supply
· Interface: LVTTL
· JEDEC 100-pin Plastic package
    - QFP (body thickness=2.8mm)
    - TQFP1.4 (body thickness=1.4mm)



Pinout

  Connection Diagram


Specifications

Symbol
Item
Rating
Unit
Note
VIN, VOUT
Input, Output Voltage
- 0.3~VDD + 0.3
V
1
VDD, VDDQ
Power Supply Voltage
- 0.3~4.6
V
1
TOPR
Operating Temperature
0~70
°C
1
TSTG
Storage Temperature
- 55~150
°C
1
TSOLDER
Soldering Temperature (10s)
260
°C
1
PD
Power Dissipation
1
W
1
IOUT
Short Circuit Output Current
50
mA
1



Description

The EM637327 SGRAM is a high-speed CMOS synchronous graphics DRAM containing 32 Mbits. It is internally configured as a dual 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits. Read and write accesses to the SGRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

The EM637327 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use.

By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth.




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