Features: · Fast access time from clock: 4.5/5.5/5.5/6 ns· Fast clock rate: 200/166/143/125 MHz· Fully synchronous operation· Internal pipelined architecture· Dual internal banks (512K x 32bit x 2bank)· Programmable Mode - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst T...
EM637327: Features: · Fast access time from clock: 4.5/5.5/5.5/6 ns· Fast clock rate: 200/166/143/125 MHz· Fully synchronous operation· Internal pipelined architecture· Dual internal banks (512K x 32bit x 2ba...
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Symbol |
Item |
Rating |
Unit |
Note |
VIN, VOUT |
Input, Output Voltage |
- 0.3~VDD + 0.3 |
V |
1 |
VDD, VDDQ |
Power Supply Voltage |
- 0.3~4.6 |
V |
1 |
TOPR |
Operating Temperature |
0~70 |
°C |
1 |
TSTG |
Storage Temperature |
- 55~150 |
°C |
1 |
TSOLDER |
Soldering Temperature (10s) |
260 |
°C |
1 |
PD |
Power Dissipation |
1 |
W |
1 |
IOUT |
Short Circuit Output Current |
50 |
mA |
1 |
The EM637327 SGRAM is a high-speed CMOS synchronous graphics DRAM containing 32 Mbits. It is internally configured as a dual 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits. Read and write accesses to the SGRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
The EM637327 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use.
By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth.