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EM48AM1644LBB

Features: • 2 x 4 banks x 2 Mbit x 16 organisation ( Two 128MBit chips stacked in multi-chip package)• Fully Synchronous to Positive Clock Edge• Single 1.8V ±0.1V Power Supply• LVCMOS Compatible with Multiplexed Address• Programmable Burst Length 1/2/4/8/ full Page...

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SeekIC No. : 004335927 Detail

EM48AM1644LBB: Features: • 2 x 4 banks x 2 Mbit x 16 organisation ( Two 128MBit chips stacked in multi-chip package)• Fully Synchronous to Positive Clock Edge• Single 1.8V ±0.1V Power Supply̶...

EM48AM1644LBB Data Sheet

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Part Number:
EM48AM1644LBB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 2 x 4 banks x 2 Mbit x 16 organisation ( Two 128MBit chips stacked in multi-chip package)
• Fully Synchronous to Positive Clock Edge
• Single 1.8V ±0.1V Power Supply
• LVCMOS Compatible with Multiplexed Address
• Programmable Burst Length 1/2/4/8/ full Page
• Programmable CAS Latency (C/L) - 2 or 3
• Data Mask (DQM) for Read / Write Masking
• Programmable Wrap Sequence
Sequential (B/L = 1/2/4/8/full Page)
Interleave (B/L = 4/8)
• Burst Read with Single-bit Write Operation
• Deep Power Down Mode.
• Auto Refresh and Self Refresh
• Special Function Support.
PASR (Partial Array Self Refresh)
Auto TCSR (Temperature Compensated Self Refresh)
• Programmable Driver Strength Control
Full Strength or 1/2, 1/4 of Full Strength
• 4,096 Refresh Cycles / 64ms (15.625us)


Specifications

Symbol Item Rating Units
VIN, VOUT Input, Output Voltage -0.3 ~ +4.6 V
VDD, VDDQ Power Supply Voltage -0.3 ~ +4.6 V
TOP Operating Temperature Range Commercial 0 ~ +70
Extended -25 ~ +85
TSTG Storage Temperature Range -55 ~ +150
PD Power Dissipation 1 W
IOS Short Circuit Current 50 mA

Note: Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.




Description

The EM48AM1684LBB is Synchronous Dynamic Random Access Memory (SDRAM) organized as 2 x 4 banks x 2 Mbit by 16 bits. All inputs and outputs are synchronized with the positive edge of the clock.

The 256Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is designed to operate at 1.8V low power memory system. It also provides auto refresh with power saving / down mode. All inputs and outputs voltage levels are compatible with LVCMOS.

Available packages:TFBGA 54B 12mm x 8mm.




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