DescriptionThe EM44BM1684LBB is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 8Mbits x 4 banks by 16 bits.This synchronous device EM44BM1684LBB achieves high speed double-data-rate transfer...
EM44BM1684LBB: DescriptionThe EM44BM1684LBB is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 8Mbits x 4 ...
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DescriptionThe EM4450/4550 is a CMOS integrated circuit intented for use in electronic Read/Write ...
The EM44BM1684LBB is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 8Mbits x 4 banks by 16 bits.This synchronous device EM44BM1684LBB achieves high speed double-data-rate transfer rates of up to 667 Mb/sec/pin (DDR2-667) for general applications.The chip is designed to comply with the following key DDR2 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1,(3) Off-Chip Driver (OCD) impedance adjustment and On Die Termination (4) normal and weak strength data output driver.
Features of the EM44BM1684LBB are:(1)JEDEC standard VDD/VDDQ=1.8V±0.1V; (2)all inputs and outputs are compatible with SSTL_18 interface; (3)fully differential clock inputs (CK,/CK) operation; (4)4 banks; (5)posted CAS; (6)burst length: 4 and 8; (7)programmable CAS latency (CL): 3, 4 and 5; (8)programmable additive latency (AL):0, 1, 2, 3 and 4; (9)write latency (WL) =read latency (RL) -1; (10)read latency (RL) = programmable additive latency (AL) + CAS latency (CL); (11)bi-directional differential data strobe (DQS); (12)data inputs on DQS centers when write; (13)Data outputs on DQS, /DQS edges when read; (14)on chip DLL align DQ, DQS and /DQS transition with CK transition; (15)DM mask write data-in at the both rising and falling edges of the data strobe.
The absolute maximum ratings of the EM44BM1684LBB can be summarized as:(1)storage temperature range:-55 to 100;(2)operating temperature range:0 to 85;(3)input,output voltage range:-0.5 to 2.3V;(4)power supply voltage:-0.5 to 2.3V;(5)power dissipation:1W;(6)short circuit current:50mA.Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.The mode register stores the data for controlling the various operating modes of DDR2 SDRAM which contains addressing mode, burst length, /CAS latency, WR (write recovery), test mode, DLL reset and various vendor's specific opinions. The defaults values of the register is not defined, so the mode register must be written after power up for proper DDR2 SDRAM operation.