EM42AM3284LBC

DescriptionThe EM42AM3284LBC is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 4Meg words x 4 banks by 32 bits.The 512Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation.The data...

product image

EM42AM3284LBC Picture
SeekIC No. : 004335913 Detail

EM42AM3284LBC: DescriptionThe EM42AM3284LBC is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 4Meg words x 4 banks by 32 bits....

floor Price/Ceiling Price

Part Number:
EM42AM3284LBC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Description

The EM42AM3284LBC is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 4Meg words x 4 banks by 32 bits.The 512Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation.The data path internally prefetches multiple bits and EM42AM3284LBC transfers the datafor both rising and falling edges of the system clock.It means the doubled data bandwidth can be achieved at the I/O pins.

Features of the EM42AM3284LBC are:(1)internal double-date-rate architecture with 2 accesses per clock cycle; (2)1.8V ±0.1V VDD/VDDQ; (3)1.8V LV-COMS compatible I/O; (4)burst length (B/L) of 2, 4, 8, 16; (5)3 Clock read latency; (6)bi-directional,intermittent data strobe(DQS); (7)all inputs except data and DM are sampled at the positive edge of the system clock.; (8)data mask (DM) for write data; (9)sequential & interleaved burst type available; (10)auto precharge option for each burst accesses; (11)DQS edge-aligned with data for read cycles; (12)DQS center-aligned with data for write cycles; (13)No DLL ;CK to DQS is not synchronized; (14)deep power down mode; (15)partial array self-refresh(PASR); (16)auto temperature compensated self-refresh (TCSR) by built-in temperature sensor; (17)auto refresh and self refresh; (18)8,192 refresh cycles / 64ms.

The absolute maximum ratings of the EM42AM3284LBC can be summarized as:(1)storage temperature range:-55 to 125;(2)operating temperature range:0 to 70;(3)input,output voltage range:-0.5 to 2.3V;(4)power supply voltage:-0.5 to 2.3V;(5)power dissipation:1W;(6)short circuit current:50mA.Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.Two clock cycles are requested to complete the write operation in the mode register. The mode register contents can be changed using the same command and clock cycle requirements during operating as long as all banks are in the idle state. The mode register is divided into various fields depending on functionality.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Transformers
Power Supplies - Board Mount
Boxes, Enclosures, Racks
Motors, Solenoids, Driver Boards/Modules
RF and RFID
View more