Features: • Extended Operating Voltage Range 1.5 to 3.6 V• Very Low Standby Voltage 1.2 V• Extended Temperature Range -20o to +80oC• Fast Cycle Time 100 ns (@ 2.7V)• Very Low Operating Current ICC < 1 mA typical at 3V, 1 Mhz• Very Low Standby Current ISB = 10...
EM033C08: Features: • Extended Operating Voltage Range 1.5 to 3.6 V• Very Low Standby Voltage 1.2 V• Extended Temperature Range -20o to +80oC• Fast Cycle Time 100 ns (@ 2.7V)• Ve...
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Item |
Symbol |
Rating |
Unit |
Voltage on any pin relative to VSS |
VIN,OUT |
0.3 to VCC+0.3 |
V |
Voltage on VCC Supply Relative to VSS |
VCC |
0.3 to 4.6 |
V |
Power Dissipation |
PD |
500 |
mW |
Storage Temperature |
TSTG |
40 to +125 |
|
Operating Temperature - Extended Commercial |
TA |
-20 to +80 |
The EM033C08 is an integrated memory device containing a low power 256 Kbit Static Random Access Memory organized as 32,768 words by 8 bits. The device is fabricated using an advanced CMOS process and NanoAmp's high-speed/lowpower circuit technology. This device is designed to be quite effective in battery powered products with it's very low operating and standby currents. EM033C08 is also capable of full operation at voltages as low as 1.5 volts. The device pinout is fully compatible with NanoAmp's EM02R2XX family of Combination RAM and ROM products making it very easy to substitute an SRAM only device where the ROM is unneccessary in the application. This device is extremely stable over broad temperature and voltage ranges.