EL817 Series

The EL817 series contains a infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Features of the EL817 series are:(1)current transfer ratio(CTR:MIN.50% at IF =5mA ,VCE =5V); (2)high isolation voltage between input and output (Viso=5000 V rms ); (3)compact dual-in-line package; (4) Pb free.

The absolute maximum ratings of the EL817 series  can be summarized as:(1): total power dissipation(Ptot) is  200 mW; (2): isolation voltage(Viso) is  5000 V rms; (3): operating temperature(Topr) is  -55°C to +110 °C; (4): storage temperature(Tstg ) is -55°C to +125 °C; (5): soldering temperature(Tsol) is 260 °C; (6): input forward current(IF) is 50 mA; (7): output collector power dissipation(Pc) is 150 mW.