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EFC480C

Features: ` +33.5dBm TYPICAL OUTPUT POWER` 18.0dB TYPICAL POWER GAIN AT 2GHz` High BVgd FOR 10V BIAS` 0.5 X 4800 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION AND PLATED HEAT SINK` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY` Idss SORTED IN 80mA...

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EFC480C: Features: ` +33.5dBm TYPICAL OUTPUT POWER` 18.0dB TYPICAL POWER GAIN AT 2GHz` High BVgd FOR 10V BIAS` 0.5 X 4800 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION AND PLATED HEAT SINK` ADVANCED EPI...

EFC480C Data Sheet

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Part Number:
EFC480C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

`  +33.5dBm TYPICAL OUTPUT POWER
`  18.0dB TYPICAL POWER GAIN AT 2GHz
`  High BVgd FOR 10V BIAS
`  0.5 X 4800 MICRON RECESSED "MUSHROOM" GATE
`  Si3N4 PASSIVATION AND PLATED HEAT SINK
`  ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
`  Idss SORTED IN 80mA PER BIN RANGE


Specifications

SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
14V
-8V
Idss
120mA
32dBm
175oC
-65/175oC
11.4 W
10V
-4.5V
960mA
20mA
@3dB Compression
150oC
-65/150oC
9.5 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
          2. Exceeding any of the above ratings may reduce MTTF below design goals.


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