Features: ` HERMETIC 100mil CERAMIC FLANGE PACKAGE` +28.0dBm TYPICAL OUTPUT POWER` HIGH BVgd FOR 10V BIAS` 9.0dB TYPICAL POWER GAIN AT 8GHz` 0.3 X 1200 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITYSpe...
EFC120B-100F: Features: ` HERMETIC 100mil CERAMIC FLANGE PACKAGE` +28.0dBm TYPICAL OUTPUT POWER` HIGH BVgd FOR 10V BIAS` 9.0dB TYPICAL POWER GAIN AT 8GHz` 0.3 X 1200 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVA...
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SYMBOLS |
PARAMETERS |
ABSOLUTE1 |
CONTINUOUS2 |
Vds Vgs Ids Igsf Pin Tch Tstg Pt |
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation |
14V -8V Idss 30mA 26dBm 175oC -65/175oC 3.2W |
10V -4.5V 270mA 5mA @ 3dB Compression 150oC -65/150oC 2.7W |