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EFC060B

Features: ` +25.0dBm TYPICAL OUTPUT POWER` 10.5dB TYPICAL POWER GAIN AT 12GHz` HIGH BVgd FOR 10V BIAS` 0.3 X 600 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY` Idss SORTED IN 10mA PER BIN RANGESpecifi...

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SeekIC No. : 004334446 Detail

EFC060B: Features: ` +25.0dBm TYPICAL OUTPUT POWER` 10.5dB TYPICAL POWER GAIN AT 12GHz` HIGH BVgd FOR 10V BIAS` 0.3 X 600 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL DOPING PROFILE...

EFC060B Data Sheet

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Part Number:
EFC060B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

`  +25.0dBm TYPICAL OUTPUT POWER
`  10.5dB TYPICAL POWER GAIN AT 12GHz
`  HIGH BVgd FOR 10V BIAS
`  0.3 X 600 MICRON RECESSED "MUSHROOM" GATE
`  Si3N4 PASSIVATION
`  ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
`  Idss SORTED IN 10mA PER BIN RANGE


Specifications

</tab
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
14V
-8V
Idss
15mA
23dBm
175oC
-65/175oC
1.8W
10V
-4.5V
150mA
2.5mA
@ 3dB Compression
150oC
-65/150oC
1.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
          2. Exceeding any of the above ratings may reduce MTTF below design goals.


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