Features: ` +36.5dBm TYPICAL OUTPUT POWER` 16.0dB TYPICAL POWER GAIN AT 2GHz` 0.5 X 9600 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION AND PLATED HEAT SINK` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY` Idss SORTED IN 160mA PER BIN RANGESpecifica...
EFA960B: Features: ` +36.5dBm TYPICAL OUTPUT POWER` 16.0dB TYPICAL POWER GAIN AT 2GHz` 0.5 X 9600 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION AND PLATED HEAT SINK` ADVANCED EPITAXIAL DOPING PROFILE PR...
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SYMBOLS |
PARAMETERS |
ABSOLUTE1 |
CONTINUOUS2 |
Vds Vgs Ids Igsf Pin Tch Tstg Pt |
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation |
12V -8V Idss 240mA 35dBm 175oC -65/175oC 27 W |
8V -4V 2.8A 40mA @3dB Compression 150oC -65/150oC 23 W |