EFA960B

Features: ` +36.5dBm TYPICAL OUTPUT POWER` 16.0dB TYPICAL POWER GAIN AT 2GHz` 0.5 X 9600 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION AND PLATED HEAT SINK` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY` Idss SORTED IN 160mA PER BIN RANGESpecifica...

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EFA960B Picture
SeekIC No. : 004334445 Detail

EFA960B: Features: ` +36.5dBm TYPICAL OUTPUT POWER` 16.0dB TYPICAL POWER GAIN AT 2GHz` 0.5 X 9600 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION AND PLATED HEAT SINK` ADVANCED EPITAXIAL DOPING PROFILE PR...

floor Price/Ceiling Price

Part Number:
EFA960B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

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Upload time: 2024/11/21

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Product Details

Description



Features:

`  +36.5dBm TYPICAL OUTPUT POWER
`  16.0dB TYPICAL POWER GAIN AT 2GHz
`  0.5 X 9600 MICRON RECESSED "MUSHROOM" GATE
`  Si3N4 PASSIVATION AND PLATED HEAT SINK
`  ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
`  Idss SORTED IN 160mA PER BIN RANGE



Specifications

SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
12V
-8V
Idss
240mA
35dBm
175oC
-65/175oC
27 W
8V
-4V
2.8A
40mA
@3dB Compression
150oC
-65/150oC
23 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
          2. Exceeding any of the above ratings may reduce MTTF below design goals.



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