Features: ` NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE` +23.5dBm TYPICAL OUTPUT POWER` 7.0 dB TYPICAL POWER GAIN AT 12GHz` 0.3 X 800 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITYSpecifications ...
EFA080A-70: Features: ` NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE` +23.5dBm TYPICAL OUTPUT POWER` 7.0 dB TYPICAL POWER GAIN AT 12GHz` 0.3 X 800 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPI...
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Features: ` NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE` +18.5dBm TYPICAL OUTPUT POWER` 10.5dB TYP...
Features: ` NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE` +20.0dBm TYPICAL OUTPUT POWER` 10.0dB TYP...
SYMBOLS |
PARAMETERS |
ABSOLUTE1 |
CONTINUOUS2 |
Vds Vgs Ids Igsf Pin Tch Tstg Pt |
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation |
8V -5V Idss 20mA 22dBm 175oC -65/175oC 1.1W |
5V -4V 185mA 4mA @ 3dB Compression 150 oC -65/150 oC 0.9W |