Photodetector Transistors Photo Microsensor
EE-SA113: Photodetector Transistors Photo Microsensor
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Maximum Power Dissipation : | 100 mW |
Item |
Symbol |
Rated value | |
Emitter
|
Forward current |
IF |
50 mA (see note 1) |
Pulse forward current |
IFP |
1 A (see note 2) | |
Reverse voltage |
VR |
4 V | |
Collector-emitter voltage |
VCEO |
30V | |
Receiver |
Emitter-collector voltage |
VECO |
5V |
Collector current |
IC |
20 mA | |
Collector dissipation |
PC |
100 mW (see note 1) | |
Ambient temperature |
Operating |
Topr |
25°C to70°C |
Storage |
Tstg |
40°C to 85°C | |
Soldering |
Tsol |
260°C (see note 3) |
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 s maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.