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EDS6416AHBH

Features: • 3.3V and 2.5V power supply• Clock frequency: 166MHz/133MHz (max.)• Single pulsed /RAS• ×16 organization• 4 banks can operate simultaneously and independently• Burst read/write operation and burst read/single write operation capability• 2 variat...

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SeekIC No. : 004333914 Detail

EDS6416AHBH: Features: • 3.3V and 2.5V power supply• Clock frequency: 166MHz/133MHz (max.)• Single pulsed /RAS• ×16 organization• 4 banks can operate simultaneously and independentl...

EDS6416AHBH Data Sheet

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Part Number:
EDS6416AHBH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

• 3.3V and 2.5V power supply
• Clock frequency: 166MHz/133MHz (max.)
• Single pulsed /RAS
• ×16 organization
• 4 banks can operate simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• 2 variations of burst sequence
-Sequential (BL = 1, 2, 4, 8, full page)
-Interleave (BL = 1, 2, 4, 8)
• Programmable /CAS latency (CL): 2, 3
• Byte control by UDQM and LDQM
• Refresh cycles: 4096 refresh cycles/64ms
• 2 variations of refresh
-Auto refresh
-Self refresh
• FBGA package with lead free solder (Sn-Ag-Cu)
-RoHS compliant


Pinout

Connection Diagram


Specifications

Parameter

Symbol

Rating

Unit

Voltage on any pin relative to VSS
[EDS6416AH]
[EDS6416CH]
VT
-0.5 to VDD + 0.5 ( 4.6 (max.))
V
VT
-0.5 to VDD + 0.5 ( 3.6 (max.))
V
Supply voltage relative to VSS
[EDS6416AH]
[EDS6416CH]
VDD
0.5 to +4.6
V
VDD
0.5 to +3.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating temperature
TA
0 to +70
°C

Storage temperature
Tstg
55 to +125
°C

Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.




Description

The EDS6416AHBH, EDS6416CHBH are 64M bits SDRAMs organized as 1,048,576 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. Supply voltages are 3.3V (EDS6416AHBH) and 2.5V (EDS6416CHBH).

It is packaged in 60-ball FBGA.




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