Features: • 3.3V power supply• Clock frequency: 166MHz/133MHz (max.)• LVTTL interface• Single pulsed /RAS• 4 banks can operate simultaneously and independently• Burst read/write operation and burst read/single write operation capability• Programmable burst...
EDS5108ABTA: Features: • 3.3V power supply• Clock frequency: 166MHz/133MHz (max.)• LVTTL interface• Single pulsed /RAS• 4 banks can operate simultaneously and independently• B...
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Features: • 3.3V power supply• Clock frequency: 166MHz/133MHz (max.)• LVTTL inte...
Features: • 3.3V power supply• Clock frequency: 166MHz/133MHz (max.)• LVTTL inte...
Parameter |
Symbol |
Rating |
Unit |
Voltage on any pin relative to VSS |
VT |
0.5 to VDD + 0.5 (4.6 (max.)) |
V |
Supply voltage relative to VSS |
VDD |
0.5 to +4.6 |
V |
Short circuit output current |
IOS |
50 |
mA |
Power dissipation |
PD |
1.0 |
W |
Operating temperature |
TA |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
The EDS5104AB is a 512M bits SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDS5108AB is a 512M bits SDRAM organized as 16,777,216 words × 8 bits × 4 banks. The EDS5116AB is a 512M bits SDRAM organized as 8,388,608 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54- pin plastic TSOP (II).