EDS5108ABTA

Features: • 3.3V power supply• Clock frequency: 166MHz/133MHz (max.)• LVTTL interface• Single pulsed /RAS• 4 banks can operate simultaneously and independently• Burst read/write operation and burst read/single write operation capability• Programmable burst...

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EDS5108ABTA Picture
SeekIC No. : 004333912 Detail

EDS5108ABTA: Features: • 3.3V power supply• Clock frequency: 166MHz/133MHz (max.)• LVTTL interface• Single pulsed /RAS• 4 banks can operate simultaneously and independently• B...

floor Price/Ceiling Price

Part Number:
EDS5108ABTA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• 3.3V power supply
• Clock frequency: 166MHz/133MHz (max.)
• LVTTL interface
• Single pulsed /RAS
• 4 banks can operate simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length (BL): 1, 2, 4, 8, full page
• 2 variations of burst sequence
-Sequential (BL = 1, 2, 4, 8, full page)
-Interleave (BL = 1, 2, 4, 8)
• Programmable /CAS latency (CL): 2, 3
• Byte control by DQM
: DQM (EDS5104AB, EDS5108AB)
: UDQM, LDQM (EDS5116AB)
• Refresh cycles: 8192 refresh cycles/64ms
• 2 variations of refresh
-Auto refresh
-Self refresh



Pinout

  Connection Diagram


Specifications

Parameter

Symbol

Rating

Unit

Voltage on any pin relative to VSS
VT
0.5 to VDD + 0.5 (4.6 (max.))
V
Supply voltage relative to VSS
VDD
0.5 to +4.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating temperature
TA
0 to +70
°C

Storage temperature

Tstg
55 to +125
°C

Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.




Description

The EDS5104AB is a 512M bits SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDS5108AB is a 512M bits SDRAM organized as 16,777,216 words × 8 bits × 4 banks. The EDS5116AB is a 512M bits SDRAM organized as 8,388,608 words × 16 bits × 4 banks. All inputs and outputs are referred to the rising edge of the clock input. It is packaged in standard 54- pin plastic TSOP (II).




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