Features: SpecificationsDescription The ECS-2532VXO offers a 2.8V and 3.3V version, subminiature SMD VCXO. Ideal for today's high density applications. For the operating conditions and electerical characteristics of ECS-2532VXO (+2.8V) are Frequency Range=2.000 to 54.000MHz, Operating Temperature...
ECS-2532VXO: Features: SpecificationsDescription The ECS-2532VXO offers a 2.8V and 3.3V version, subminiature SMD VCXO. Ideal for today's high density applications. For the operating conditions and electerical ...
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The ECS-2532VXO offers a 2.8V and 3.3V version, subminiature SMD VCXO. Ideal for today's high density applications.
For the operating conditions and electerical characteristics of ECS-2532VXO (+2.8V) are Frequency Range=2.000 to 54.000MHz, Operating Temperature(Standard)=-10 to +70°C, Storage Temperature=-40 to +85°C, Supply Voltage(VDD)=+2.66 to +2.94VDC, Frequency vs. Input Voltage(VDD ±5%)=± 5ppm, Frequency Pulling Range=± 90ppm, Control Voltage(Vcon = Pin#1)=0 to +1.4 to +2.8VDC, Frequency Slope(Positve), Frequency Linearity=15, Modulation bandwidth(-3 dB)=10KHz, Vcon input impedance(Vcon-GND)=100KΩ, Output Symmetry(@ 50% VDD level)=40/60%, Rise and Fall Times 20% to 80% VDD level(2.0 MHz to 10.0 MHz)/(10.1 MHz to 54.0 MHz)=10/6, "0" level(VOL)=10% VDDVDC, "1" level(VOH)=90% VDDVDC, Output Load(CMOS)=15pF, Input Current(No Load)=5mA, SSB Phase Noise(at 1 KHz offset)=-120dBc/Hz, Aging (first year)(at +25°C ±3°C)=± 5ppm.
For the operating conditions and electerical characteristics of ECS-2532VXO (+3.3V) are Frequency Range=2.000 to 54.000MHz, Operating Temperature(Standard)=-10 to +70°C, Storage Temperature=-40 to +85°C, Supply Voltage(VDD)=+3.135 to +3.465VDC, Frequency vs. Input Voltage(VDD ±5%)=± 5ppm, Frequency Pulling Range=± 90ppm, Control Voltage(Vcon = Pin#1)=0 to +1.4 to +2.8VDC, Frequency Slope(Positve), Frequency Linearity=15, Modulation bandwidth(-3 dB)=10KHz, Vcon input impedance(Vcon-GND)=100KΩ, Output Symmetry(@ 50% VDD level)=60/40%, Rise and Fall Times 20% to 80% VDD level(2.0 MHz to 10.0 MHz)/(10.1 MHz to 54.0 MHz)=10/6, "0" level(VOL)=10% VDDVDC, "1" level(VOH)=90% VDDVDC, Output Load(CMOS)=15pF, Input Current(No Load)=8mA, SSB Phase Noise(at 1 KHz offset)=-120dBc/Hz, Aging (first year)(at +25°C ±3°C)=± 5ppm.