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EC2612

Features: ¦ 0.8dB minimum noise figure @ 18GHz¦1.5dB minimum noise figure @ 40GHz¦12dB associated gain @ 18GHz¦9.5dB associated gain @ 40GHzSpecifications Symbol Parameter Values Units Vds Drain to source voltage 3.5 V Vgs Gate to source voltage -2....

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SeekIC No. : 004331324 Detail

EC2612: Features: ¦ 0.8dB minimum noise figure @ 18GHz¦1.5dB minimum noise figure @ 40GHz¦12dB associated gain @ 18GHz¦9.5dB associated gain @ 40GHzSpecifications Symbol ...

EC2612 Data Sheet

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Part Number:
EC2612
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

¦ 0.8dB minimum noise figure @ 18GHz
¦ 1.5dB minimum noise figure @ 40GHz
¦ 12dB associated gain @ 18GHz
¦ 9.5dB associated gain @ 40GHz


Specifications

Symbol Parameter Values Units
Vds Drain to source voltage 3.5 V
Vgs Gate to source voltage -2.5 V
Pt Total power dissipation 280 mW
Tch Operating channel temperature +175 °C
Tstg Storage temperature range -55 to +175 °C



Description

The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances.
EC2612 is available in chip form with sources viaholes connection.Only gate and drain wiresbounding are required.




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