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EBJ21UE8BAW0

SpecificationsDensity: 2GB Organization -256M words x 64 bits, 2 ranks Mounting 16 pieces of 1G bits DDR3 SDRAM sealed in FBGA Package: 240-pin socket type dual in line memory module (DIMM) -PCB height: 30.0mm -Lead pitch: 1.0mm -Lead-fre...

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SeekIC No. : 004331077 Detail

EBJ21UE8BAW0: SpecificationsDensity: 2GB Organization -256M words x 64 bits, 2 ranks Mounting 16 pieces of 1G bits DDR3 SDRAM sealed in FBGA Package: 240-pin socket type dual in l...

EBJ21UE8BAW0 Data Sheet

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Part Number:
EBJ21UE8BAW0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Specifications

  • Density: 2GB
  • Organization
    -256M words x 64 bits, 2 ranks
  • Mounting 16 pieces of 1G bits DDR3 SDRAM sealed in FBGA
  • Package: 240-pin socket type dual in line memory module (DIMM)
    -PCB height: 30.0mm
    -Lead pitch: 1.0mm
    -Lead-free (RoHS compliant)
  • Power supply: VDD = 1.5V +/- 0.075V
  • Data rate: 1333Mbps/1066Mbps/800Mbps (max.)
  • Eight internal banks for concurrent operation (components)
  • Interface: SSTL_15
  • Burst lengths (BL): 8 and 4 with Burst Chop (BC)
  • /CAS Latency (CL): 5, 6, 7, 8, 9
  • /CAS write latency (CWL): 5, 6, 7
  • Precharge: auto precharge option for each burst access
  • Refresh: auto-refresh, self-refresh
  • Refresh cycles
    -Average refresh period
     7.8 µs at 0'C <= TC <= +85'C
     3.9 µs at +85'C < TC <= +95'C
  • Operating case temperature range
    -TC = 0'C to +95'C



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