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EBE11UE6AESA

SpecificationsDensity: 1GB Organization -128M words x 64 bits, 2 ranks Mounting 8 pieces of 1G bits DDR2 SDRAM with FBGA Package: 200-pin socket type small outline dual in line memory module (SO-DIMM) -PCB height: 30.0mm -Lead pitch: 0.6mm ...

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SeekIC No. : 004331011 Detail

EBE11UE6AESA: SpecificationsDensity: 1GB Organization -128M words x 64 bits, 2 ranks Mounting 8 pieces of 1G bits DDR2 SDRAM with FBGA Package: 200-pin socket type small outline d...

EBE11UE6AESA Data Sheet

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Part Number:
EBE11UE6AESA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/14

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Product Details

Description



Specifications

  • Density: 1GB
  • Organization
    -128M words x 64 bits, 2 ranks
  • Mounting 8 pieces of 1G bits DDR2 SDRAM with FBGA
  • Package: 200-pin socket type small outline dual in line memory module (SO-DIMM)
    -PCB height: 30.0mm
    -Lead pitch: 0.6mm
    -Lead-free (RoHS compliant)
     (EBE11UE6AESA-xx-E)
    -Lead-free (RoHS compliant) and Halogen-free
     (EBE11UE6AESA-xx-F)
  • Power supply: VDD = 1.8V +/- 0.1V
  • Data rate: 800Mbps/667Mbps (max.)
  • Eight internal banks for concurrent operation (components)
  • Interface: SSTL_18
  • Burst lengths (BL): 4, 8
  • /CAS Latency (CL): 3, 4, 5, 6
  • Precharge: auto precharge option for each burst access
  • Refresh: auto-refresh, self-refresh
  • Refresh cycles: 8192 cycles/64ms
    -Average refresh period
     7.8 µs at 0'C <= TC <= +85'C
     3.9 µs at +85'C < TC <= +95'C
  • Operating case temperature range
    -TC = 0'C to +95'C



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