EBE11UD8AHWA-8E-E

Features of the EBE11UD8AHWA-8E-E are:(1)double-data-rate architecture; two data transfers per clock cycle;(2)the high-speed data transfer is realized by the 4 bits prefetch pipelined architecture;(3)bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver;(4)DQS is edge-aligned with data for READs; centeraligned with data for WRITEs;(5)differential clock inputs (CK and /CK);(6)DLL aligns DQ and DQS transitions with CK transitions;(7)commands entered on each positive CK edge; data and data mask referenced to both edges of DQS;(8)data mask (DM) for write data;(9)posted /CAS by programmable additive latency for better command and data bus efficiency;(10)off-chip-driver impedance adjustment and on-die-termination for better signal quality;(11)DQS can be disabled for single-ended data strobe operation.

Specifications of the EBE11UD8AHWA-8E-E are:(1)density is 2GB;(2)organization is 256M words * 72 bits, 2 ranks;(3)mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA;(4)power supply is VDD=1.8V±0.1V;(5)data rate is 667Mbps (max.);(6)four internal banks for concurrent operation (components);(7)interface is SSTL_18;(8)burst lengths (BL) is 4, 8;(9)CAS latency (CL) is 3, 4, 5, 6;(10)precharge: auto precharge option for each burst access;(11)refresh is auto-refresh, self-refresh;(12)refresh cycles is 8192 cycles/64ms;(13)operating case temperature range is 0 to +95.

The absolute maximum ratings of the  EBE11UD8AHWA-8E-E can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VT,the value is -0.5 to +2.3,the unit is V;(2):the parameter is supply voltage relative to VSS,the symbol is VDD,the value is -0.5 to +2.3,the unit is V;(3):the parameter is short circuit output current,the symbol is IOS,the value is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the value is 8,the unit is W;(5):the parameter is operating case temperature,the symbol is Tc,the value is 0 to +95,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +100,the unit is .