PinoutDescriptionThe EBE11UD8ABFV-BE-E is 128M words * 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA package. Read and write operations are performed at the cross points of the CK and the /CK. Features of the EBE11UD8ABFV-BE-E are:(1)240...
EBE11UD8ABFV-BE-E: PinoutDescriptionThe EBE11UD8ABFV-BE-E is 128M words * 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA package. Read and write operations are...
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PinoutDescriptionFeatures of the EBE10AD4AGFA-4A-E are:(1)double-data-rate architecture; two data ...
PinoutDescriptionFeatures of the EBE10AD4AJFA are:(1)double-data-rate architecture; two data trans...
PinoutDescriptionFeatures of the EBE10AE8ACFA are:(1)double-data-rate architecture; two data trans...
The EBE11UD8ABFV-BE-E is 128M words * 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA package. Read and write operations are performed at the cross points of the CK and the /CK.
Features of the EBE11UD8ABFV-BE-E are:(1)240-pin socket type dual in line memory module;(2)1.85V power supply;(3)data rate is 667Mbps/600Mbps (max.);(4)SSTL_18 compatible I/O;(5)double-data-rate architecture is two data transfers per clock cycle;(6)bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver;(7)DQS is edge aligned with data for READs is centeraligned with data for WRITEs;(8)differential clock inputs (CK and /CK);(9)DLL aligns DQ and DQS transitions with CK transitions;(10)commands entered on each positive CK edge: data and data mask referenced to both edges of DQS;(11)four internal banks for concurrent operation;(12)data mask for write data;(13)burst lengths:4,8;(14)CAS latency is 3,4,5;(15)auto precharge operation for each burst access;(16)auto refresh and self refresh modes;(17)7.8s average periodic refresh interval;(18)posted CAS by programmable additive latency for better command and data bus efficiency;(19)off-chip-driver impedance adjustment and on-die-termination for better signal quality;(20)DQS can be disabled for single-ended data strobe operation.
The absolute maximum ratings of the EBE11UD8ABFV-BE-E can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VT,the value is -0.5 to +2.3,the unit is V;(2):the parameter is supply voltage relative to VSS,the symbol is VDD,the value is -0.5 to +2.3,the unit is V;(3):the parameter is short circuit output current,the symbol is IOS,the value is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the value is 8,the unit is W;(5):the parameter is operating case temperature,the symbol is Tc,the value is 0 to +85,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +100,the unit is .