EBE11FD8AHFE-6E-E

Features of the EBE11FD8AHFE-6E-E are:(1)JEDEC standard raw card B design;(2)industry standard advanced memory buffer (AMB);(3)high-speed differential point-to-point link interface at 1.5V (JEDEC draft spec);(4)various features/modes;(5)channel error detection and reporting;(6)automatic DDR2 SDRAM bus and channel calibration;(7)SPD (serial presence detect) with 1piece of 256 byte serial EEPROM.

Specifications of the EBE11FD8AHFE-6E-E are:(1)density is 1GB;(2)organization is 128M words * 72 bits, 2 ranks;(3)mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA;(4)power supply is VDD=1.8V±0.1V;(5)data rate is 667Mbps (max.);(6)four internal banks for concurrent operation (components);(7)interface is SSTL_18;(8)burst lengths (BL) is 4, 8;(9)CAS latency (CL) is 3, 4, 5;(10)precharge: auto precharge option for each burst access;(11)refresh is auto-refresh, self-refresh;(12)refresh cycles is 8192 cycles/64ms;(13)operating case temperature range is 0 to +95.

The absolute maximum ratings of the  EBE11FD8AHFE-6E-E can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VIN/VOUT,the value is -0.3 to +1.75,the unit is V;(2):the parameter is AMB core power voltage relative to VSS,the symbol is VCC,the value is -0.3 to +1.75,the unit is V;(3):the parameter is DRAM interface power voltage relative to VSS,the symbol is VDD,the value is -0.5 to +2.30,the unit is V;(4):the parameter is termination voltage relative to VSS,the symbol is VTT,the value is -0.5 to +2.30,the unit is V;(5):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +100,the unit is .