PinoutDescriptionFeatures of the EBE10UE8ACFA-6E-E are:(1)double-data-rate architecture; two data transfers per clock cycle;(2)the high-speed data transfer is realized by the 4 bits prefetch pipelined architecture;(3)bi-directional differential data strobe (DQS and /DQS) is transmitted/received wi...
EBE10UE8ACFA-6E-E: PinoutDescriptionFeatures of the EBE10UE8ACFA-6E-E are:(1)double-data-rate architecture; two data transfers per clock cycle;(2)the high-speed data transfer is realized by the 4 bits prefetch pipelin...
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PinoutDescriptionFeatures of the EBE10AD4AGFA-4A-E are:(1)double-data-rate architecture; two data ...
PinoutDescriptionFeatures of the EBE10AD4AJFA are:(1)double-data-rate architecture; two data trans...
PinoutDescriptionFeatures of the EBE10AE8ACFA are:(1)double-data-rate architecture; two data trans...
Features of the EBE10UE8ACFA-6E-E are:(1)double-data-rate architecture; two data transfers per clock cycle;(2)the high-speed data transfer is realized by the 4 bits prefetch pipelined architecture;(3)bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver;(4)DQS is edge-aligned with data for READs; centeraligned with data for WRITEs;(5)differential clock inputs (CK and /CK);(6)DLL aligns DQ and DQS transitions with CK transitions;(7)commands entered on each positive CK edge; data and data mask referenced to both edges of DQS;(8)data mask (DM) for write data;(9)posted /CAS by programmable additive latency for better command and data bus efficiency;(10)off-chip-driver impedance adjustment and on-die-termination for better signal quality;(11)DQS can be disabled for single-ended data strobe operation.
Specifications of the EBE10UE8ACFA-6E-E are:(1)density is 1GB;(2)organization is 128M words * 64 bits, 1 rank;(3)mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA;(4)package is 240-pin socket type dual in line memory module (DIMM);(5)power supply is VDD = 1.8V ± 0.1V;(6)data rate is 800Mbps/667Mbps (max.);(7)eight internal banks for concurrent operation;(8)interface is SSTL_18;(9)burst lengths (BL) is 4, 8;(10)CAS latency (CL) is 3, 4, 5, 6;(11)precharge is auto precharge option for each burst access;(12)refresh is auto-refresh, self-refresh;(13)refresh cycles is 8192 cycles/64ms;(14)operating case temperature range is 0 to +95.
The absolut maximum ratings of the EBE10UE8ACFA-6E-E can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VT,the rating is -0.5 to +2.3,the unit is V;(2):the parameter is supply voltage relative to VSS,the symbol is VDD,the rating is -0.5 to +2.3,the unit is V;(3):the parameter is short circuit output current,the symbol is IOS,the rating is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the rating is 8,the unit is W;(5):the parameter is operating case temperature,the symbol is TC,the rating is 0 to +95,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the rating is -55 to +100,the unit is .