PinoutDescriptionThe EBE10RD4AEFA-6 is 128M words * 72 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA package. Read and write operations are performed at the cross points of the CK and the /CK. Features of the EBE10RD4AEFA-6 are:(1)240-pin socket type...
EBE10RD4AEFA-6: PinoutDescriptionThe EBE10RD4AEFA-6 is 128M words * 72 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA package. Read and write operations are performed at...
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PinoutDescriptionFeatures of the EBE10AD4AGFA-4A-E are:(1)double-data-rate architecture; two data ...
PinoutDescriptionFeatures of the EBE10AD4AJFA are:(1)double-data-rate architecture; two data trans...
PinoutDescriptionFeatures of the EBE10AE8ACFA are:(1)double-data-rate architecture; two data trans...
The EBE10RD4AEFA-6 is 128M words * 72 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA package. Read and write operations are performed at the cross points of the CK and the /CK.
Features of the EBE10RD4AEFA-6 are:(1)240-pin socket type dual in line memory module;(2)1.85V power supply;(3)data rate is 667Mbps(max.);(4)SSTL_18 compatible I/O;(5)double-data-rate architecture is two data transfers per clock cycle;(6)bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver;(7)DQS is edge aligned with data for READs is centeraligned with data for WRITEs;(8)differential clock inputs (CK and /CK);(9)DLL aligns DQ and DQS transitions with CK transitions;(10)commands entered on each positive CK edge: data and data mask referenced to both edges of DQS;(11)four internal banks for concurrent operation;(12)1 piece of PLL clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2k bits EEPROM) for presence detect (PD);(13)burst lengths:4,8;(14)CAS latency is 3,4,5;(15)auto precharge operation for each burst access;(16)auto refresh and self refresh modes;(17)7.8s average periodic refresh interval;(18)posted CAS by programmable additive latency for better command and data bus efficiency;(19)off-chip-driver impedance adjustment and on-die-termination for better signal quality;(20)DQS can be disabled for single-ended data strobe operation.
The absolute maximum ratings of the EBE10RD4AEFA-6 can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VT,the value is -0.5 to +2.3,the unit is V;(2):the parameter is supply voltage relative to VSS,the symbol is VDD,the value is -0.5 to +2.3,the unit is V;(3):the parameter is short circuit output current,the symbol is IOS,the value is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the value is 18,the unit is W;(5):the parameter is operating case temperature,the symbol is Tc,the value is 0 to +95,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +100,the unit is .