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EBE10FE8ACFT

SpecificationsDensity: 1GB Organization -128M words x 72 bits, 1 rank Mounting 9 pieces of 1G bits DDR2 SDRAM sealed in FBGA Package -240-pin fully buffered, socket type dual in line memory module (FB-DIMM) PCB height: 30.35mm Lead pitc...

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SeekIC No. : 004330981 Detail

EBE10FE8ACFT: SpecificationsDensity: 1GB Organization -128M words x 72 bits, 1 rank Mounting 9 pieces of 1G bits DDR2 SDRAM sealed in FBGA Package -240-pin fully buffered...

EBE10FE8ACFT Data Sheet

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Part Number:
EBE10FE8ACFT
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/6

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Product Details

Description



Specifications

  • Density: 1GB
  • Organization
    -128M words x 72 bits, 1 rank
  • Mounting 9 pieces of 1G bits DDR2 SDRAM sealed in FBGA
  • Package
    -240-pin fully buffered, socket type dual in line memory module (FB-DIMM)
      PCB height: 30.35mm
      Lead pitch: 1.0mm
    -Advanced Memory Buffer (AMB): 655-ball FCBGA
    -Lead-free (RoHS compliant)
  • Power supply
    -DDR2 SDRAM: VDD = 1.8V +/- 0.1V
    -AMB: VCC = 1.5V +0.075V/-0.045
  • Data rate: 667Mbps
  • Four internal banks for concurrent operation (components)
  • Interface: SSTL_18
  • Burst lengths (BL): 4, 8
  • /CAS Latency (CL): 3, 4, 5
  • Precharge: auto precharge option for each burst access
  • Refresh: auto-refresh, self-refresh
  • Refresh cycles: 8192 cycles/64ms
    -Average refresh period
     7.8 µs at 0'C <= TC <= +85'C
     3.9 µs at +85'C < TC <= +95'C
  • Operating case temperature range
    -TC = 0'C to +95'C



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