EBD52UD6ADSA-E

Features: • 200-pin socket type small outline dual in line memory module (SO-DIMM) -PCB height: 31.75mm -Lead pitch: 0.6mm -Lead-free • 2.5V power supply • Data rate: 333Mbps/266Mbps (max.) • 2.5 V (SSTL_2 compatible) I/O • Double Data Rate architecture; two data tran...

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SeekIC No. : 004330976 Detail

EBD52UD6ADSA-E: Features: • 200-pin socket type small outline dual in line memory module (SO-DIMM) -PCB height: 31.75mm -Lead pitch: 0.6mm -Lead-free • 2.5V power supply • Data rate: 333Mbps/266Mb...

floor Price/Ceiling Price

Part Number:
EBD52UD6ADSA-E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 200-pin socket type small outline dual in line memory module (SO-DIMM) 
        -PCB height:  31.75mm 
        -Lead pitch:  0.6mm 
        -Lead-free
• 2.5V power supply
• Data rate: 333Mbps/266Mbps (max.)
• 2.5 V (SSTL_2 compatible) I/O
• Double Data Rate architecture; two data transfers per clock cycle 
• Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver 
• Data inputs, outputs and DM are synchronized with DQS 
• 4 internal banks for concurrent operation  (Components)
• DQS is edge aligned with data for READs; center aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data referenced to both edges of DQS
• Data mask (DM) for write data
• Auto precharge option for each burst access
• Programmable burst length:  2, 4, 8
• Programmable /CAS latency (CL):  2, 2.5
• Refresh cycles:  (8192 refresh cycles /64ms) 
        -7.8µs maximum average periodic refresh interval
• 2 variations of refresh 
        -Auto refresh 
        -Self refresh



Specifications

Parameter Symbol Value Unit Note
Voltage on any pin relative to VSS VT -1.0 to +3.6 V  
Supply voltage relative to VSS VDD -1.0 to +3.6 V  
Short circuit output current IOS 50 mA  
Power dissipation PD 8 W  
Operating ambient temperature TA 0 to +70 1
Storage temperature Tstg -55 to +125  



Description

The EBD52UD6ADSA is 64M words × 64 bits, 2 ranks Double Data Rate (DDR) SDRAM Small  Outline Dual In-line Memory Module, mounting 8 pieces of 512M bits DDR SDRAM sealed in TSOP package.  Read and write operations are  performed at the cross points of the CK and the /CK. 

This high-speed data transfer EBD52UD6ADSA is realized by the 2 bits prefetch-pipelined architecture.  Data strobe (DQS) both for read and write are available for high speed and reliable data bus design.  By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable.  This module provides high density mounting without utilizing surface mount technology.  Decoupling capacitors are mounted beside each TSOP on the module board. 


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