EBD52UC8AMFA

The EBD52UC8AMFA is 64M words * 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR SDRAM sealed in TSOP package. Read and write operations are performed at the cross points of the CK and the /CK.

Features of the EBD52UC8AMFA are:(1)184-pin socket type dual in line memory module;(2)2.5V power supply;(3)data rate is 400Mbps(max.);(4)4 internal banks for concurrent operation;(5)double-data-rate architecture is two data transfers per clock cycle;(6)bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver;(7)DQS is edge aligned with data for READs is centeraligned with data for WRITEs;(8)differential clock inputs (CK and /CK);(9)DLL aligns DQ and DQS transitions with CK transitions;(10)commands entered on each positive CK edge: data and data mask referenced to both edges of DQS;(11)data mask (DM) for write data;(12)auto precharge option for each burst access;(13)programmable burst length: 2, 4, 8;(14)programmable /CAS latency (CL): 3;(15)refresh cycles: (8192 refresh cycles /64ms) is 7.8s maximum average periodic refresh interval;(16)2 variations of refresh.

The absolute maximum ratings of the  EBD52UC8AMFA can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VT,the value is -0.5 to +3.7,the unit is V;(2):the parameter is supply voltage relative to VSS,the symbol is VDD,the value is -0.5 to +3.7,the unit is V;(3):the parameter is short circuit output current,the symbol is IOS,the value is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the value is 18,the unit is W;(5):the parameter is operating case temperature,the symbol is Tc,the value is 0 to +70,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +125,the unit is .