EBD51RD8ABFA-6B

PinoutDescriptionThe EBD51RD8ABFA-6B is 64M words * 72 bits, 1 ranks double data rate (DDR) SDRAM unbuffered module, mounting 9 pieces of DDR SDRAM sealed in TSOP package. Read and write operations are performed at the cross points of the CK and the /CK. Features of the EBD51RD8ABFA-6B are:(1)18...

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SeekIC No. : 004330960 Detail

EBD51RD8ABFA-6B: PinoutDescriptionThe EBD51RD8ABFA-6B is 64M words * 72 bits, 1 ranks double data rate (DDR) SDRAM unbuffered module, mounting 9 pieces of DDR SDRAM sealed in TSOP package. Read and write operations ...

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Part Number:
EBD51RD8ABFA-6B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Description

The EBD51RD8ABFA-6B is 64M words * 72 bits, 1 ranks double data rate (DDR) SDRAM unbuffered module, mounting 9 pieces of DDR SDRAM sealed in TSOP package. Read and write operations are performed at the cross points of the CK and the /CK.

Features of the EBD51RD8ABFA-6B are:(1)184-pin socket type dual in line memory module;(2)2.5V power supply;(3)data rate is 333Mbps(max.);(4)2.5 V (SSTL_2 compatible) I/O;(5)double-data-rate architecture is two data transfers per clock cycle;(6)bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver;(7)DQS is edge aligned with data for READs is centeraligned with data for WRITEs;(8)differential clock inputs (CK and /CK);(9)DLL aligns DQ and DQS transitions with CK transitions;(10)commands entered on each positive CK edge: data and data mask referenced to both edges of DQS;(11)four internal banks for concurrent operation;(12)data inputs and outputs are synchronized with DQS;(13)auto precharge option for each burst access;(14)programmable burst length: 2, 4, 8;(15)programmable /CAS latency (CL): 2, 2.5;(16)refresh cycles: (8192 refresh cycles /64ms) is 7.8s maximum average periodic refresh interval;(17)2 variations of refresh;(18)1 piece of PLL clock driver, 2 pieces of register drivers and 1 piece of serial EEPROM (2k bits EEPROM) for Presence Detect (PD).

The absolute maximum ratings of the  EBD51RD8ABFA-6B can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VT,the value is -1.0 to +3.6,the unit is V;(2):the parameter is supply voltage relative to VSS,the symbol is VDD,the value is -1.0 to +3.6,the unit is V;(3):the parameter is short circuit output current,the symbol is IOS,the value is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the value is 9,the unit is W;(5):the parameter is operating case temperature,the symbol is Tc,the value is 0 to +70,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +125,the unit is .




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