EBD12RB8ALFB-75

The EBD12RB8ALFB-75 is 16M words * 64 bits, 2 rank double data rate (DDR) SDRAM unbuffered module, mounting 9 pieces of 128M bits DDR SDRAM sealed in  TSOP package. Read and write operations are performed at the cross points of the CK and the /CK.

Features of the EBD12RB8ALFB-75 are:(1)184-pin socket type dual in line memory module;(2)2.5V power supply;(3)data rate is 266Mbps(max.);(4)SSTL-2 interface for all inputs and outputs;(5)clock frequency is 133MHz/100MHz (max.);(6)data inputs and outputs are synchronized with DQS;(7)4 banks can operate simultaneously and independently (Component);(8)burst read/write operation;(9)programmable burst length: 2, 4, 8;(10)programmable burst sequence;(11)start addressing capability;(12)programmable /CAS latency (CL): 2, 2.5;(13)4096 refresh cycles: 15.6s (4096/64ms);(14)2 variations of refresh.

The absolute maximum ratings of the  EBD12RB8ALFB-75 can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VT,the value is -0.5 to +3.6,the unit is V;(2):the parameter is supply voltage relative to VSS,the symbol is VDD,the value is -0.5 to +3.6,the unit is V;(3):the parameter is short circuit output current,the symbol is IOS,the value is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the value is 21,the unit is W;(5):the parameter is operating case temperature,the symbol is Tc,the value is 0 to +70,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +125,the unit is .