EBD11UD8ADFB

Features: • 184-pin socket type dual in line memory module (DIMM) -PCB height: 31.75mm -Lead pitch: 1.27mm • 2.5V power supply • Data rate: 333Mbps/266Mbps (max.) • 2.5 V (SSTL_2 compatible) I/O • Double Data Rate architecture; two data transfers per clock cycle ̶...

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SeekIC No. : 004330931 Detail

EBD11UD8ADFB: Features: • 184-pin socket type dual in line memory module (DIMM) -PCB height: 31.75mm -Lead pitch: 1.27mm • 2.5V power supply • Data rate: 333Mbps/266Mbps (max.) • 2.5 V (SS...

floor Price/Ceiling Price

Part Number:
EBD11UD8ADFB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 184-pin socket type dual in line memory module (DIMM) 
        -PCB height:  31.75mm 
        -Lead pitch:  1.27mm
• 2.5V power supply
• Data rate: 333Mbps/266Mbps (max.)
• 2.5 V (SSTL_2 compatible) I/O
• Double Data Rate architecture; two data transfers per clock cycle 
• Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver 
• Data inputs and outputs are synchronized with DQS 
• 4 internal banks for concurrent operation  (Component)
• DQS is edge aligned with data for READs; center aligned with data for WRITEs
•  Differential clock inputs (CK and /CK)
•  DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data referenced to both edges of DQS
• Auto precharge option for each burst access
• Programmable burst length:  2, 4, 8
• Programmable /CAS latency (CL):  2, 2.5
• Refresh cycles:  (8192 refresh cycles /64ms) 
        -7.8µs maximum average periodic refresh interval
• 2 variations of refresh 
        - Auto refresh 
        -Self refresh 



Specifications

Parameter Symbol Value Unit Note
Voltage on any pin relative to VSS VT -0.5 to +3.6 V  
Supply voltage relative to VSS VDD -0.5 to +3.6 V  
Short circuit output current IOS 50 mA  
Power dissipation PD 16 W  
Operating ambient temperature TA 0 to +70 1
Storage temperature Tstg -55 to +125  



Description

The EBD11UD8ADFB is 128M words × 64 bits, 2 ranks  Double Data Rate (DDR) SDRAM  unbuffered module,  mounting 16 pieces of 512M bits DDR SDRAM sealed  in  TSOP  package.    Read  and  write  operations  are  performed  at  the  cross  points  of  the CK  and  the  /CK. 
This  high-speed  data  transfer  EBD11UD8ADFB is  realized  by  the  2  bits  prefetch-pipelined  architecture.    Data  strobe  (DQS)  both for read and write are available for high speed and  reliable  data  bus  design.    By  setting  extended  mode  register, the on-chip Delay Locked Loop (DLL) can be  set  enable  or  disable.    This  module  provides  high  density  mounting  without  utilizing  surface  mount  technology.    Decoupling  capacitors  are  mounted beside each TSOP on the module board.


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