PinoutDescriptionThe EBD11RD8ADFA is 128M words * 72 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 18 pieces of DDR SDRAM sealed in TSOP package. Read and write operations are performed at the cross points of the CK and the /CK. Features of the EBD11RD8ADFA are:(1)184-pin socket type dual...
EBD11RD8ADFA: PinoutDescriptionThe EBD11RD8ADFA is 128M words * 72 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 18 pieces of DDR SDRAM sealed in TSOP package. Read and write operations are performed at th...
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PinoutDescriptionThe EBD11ED8ABFA is 128M words * 72 bits, 1 ranks DDR2 SDRAM unbuffered module, m...
Features: • 184-pin socket type dual in line memory module (DIMM) -PCB height: 31.75mm -Lead...
PinoutDescriptionThe EBD11UD8ABDA is 128M words * 72 bits, 1 ranks DDR2 SDRAM unbuffered module, m...
The EBD11RD8ADFA is 128M words * 72 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 18 pieces of DDR SDRAM sealed in TSOP package. Read and write operations are performed at the cross points of the CK and the /CK.
Features of the EBD11RD8ADFA are:(1)184-pin socket type dual in line memory module;(2)2.5V power supply;(3)data rate is 667Mbps(max.);(4)2.5 V (SSTL_2 compatible) I/O;(5)double-data-rate architecture is two data transfers per clock cycle;(6)bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver;(7)DQS is edge aligned with data for READs is centeraligned with data for WRITEs;(8)differential clock inputs (CK and /CK);(9)DLL aligns DQ and DQS transitions with CK transitions;(10)commands entered on each positive CK edge: data and data mask referenced to both edges of DQS;(11)four internal banks for concurrent operation;(12)1 piece of PLL clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2k bits EEPROM) for presence detect (PD);(13)data inputs and outputs are synchronized with DQS;(14)commands entered on each positive CK edge; data referenced to both edges of DQS;(15)auto precharge operation for each burst access;(16)programmable burst length: 2, 4, 8;(17)programmable /CAS latency (CL): 2, 2.5;(18)refresh cycles: (8192 refresh cycles /64ms);(19)2 variations of refresh.
The absolute maximum ratings of the EBD11RD8ADFA can be summarized as:(1):the parameter is voltage on any pin relative to VSS,the symbol is VT,the value is -1.0 to +3.6,the unit is V;(2):the parameter is supply voltage relative to VSS,the symbol is VDD,the value is -1.0 to +3.6,the unit is V;(3):the parameter is short circuit output current,the symbol is IOS,the value is 50,the unit is mA;(4):the parameter is power dissipation,the symbol is PD,the value is 18,the unit is W;(5):the parameter is operating case temperature,the symbol is Tc,the value is 0 to +70,the unit is ;(6):the parameter is storage temperature,the symbol is Tstg,the value is -55 to +125,the unit is .