EBD11ED8ABFB

Features: • 184-pin socket type dual in line memory module (DIMM) -PCB height: 31.75mm -Lead pitch: 1.27mm • 2.5V power supply • Data rate: 333Mbps/266Mbps (max.) • 2.5 V (SSTL_2 compatible) I/O • Double Data Rate architecture; two data transfers per clock cycle ̶...

product image

EBD11ED8ABFB Picture
SeekIC No. : 004330923 Detail

EBD11ED8ABFB: Features: • 184-pin socket type dual in line memory module (DIMM) -PCB height: 31.75mm -Lead pitch: 1.27mm • 2.5V power supply • Data rate: 333Mbps/266Mbps (max.) • 2.5 V (SS...

floor Price/Ceiling Price

Part Number:
EBD11ED8ABFB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 184-pin socket type dual in line memory module (DIMM) 
        -PCB height:  31.75mm 
        -Lead pitch:  1.27mm
• 2.5V power supply
• Data rate: 333Mbps/266Mbps (max.)
• 2.5 V (SSTL_2 compatible) I/O
• Double Data Rate architecture; two data transfers per clock cycle 
• Bi-directional, data strobe (DQS) is transmitted /received with data, to be used in capturing data at the receiver 
• Data inputs and outputs are synchronized with DQS 
• 4 internal banks for concurrent operation  (Component)
• DQS is edge aligned with data for READs; center aligned with data for WRITEs
•  Differential clock inputs (CK and /CK)
•  DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data referenced to both edges of DQS
• Auto precharge option for each burst access
• Programmable burst length:  2, 4, 8
• Programmable /CAS latency (CL):  2, 2.5
• Refresh cycles:  (8192 refresh cycles /64ms) 
        -7.8µs maximum average periodic refresh interval
• 2 variations of refresh 
        -Auto refresh 
        -Self refresh 



Specifications

Parameter Symbol Value Unit Note
Voltage on any pin relative to VSS VT 0.5 to +3.6 V  
Supply voltage relative to VSS VDD, VDDQ 0.5 to +3.6 V  
Short circuit output current IO 50 mA  
Power dissipation PD 18 W  
Operating ambient temperature TA 0 to +70 1
Storage temperature Tstg -55 to +125  



Description

The  EBD11ED8ABFB  is  128M  words  ×  72  bits,  2 banks  Double  Data  Rate  (DDR)  SDRAM  unbuffered module, mounted 18 pieces of 512M bits DDR SDRAM sealed  in TSOP package.  Read and write  operations are  performed  at  the  cross  points  of  the  CK  and  the /CK.  This high-speed data transfer EBD11ED8ABFB is realized by the 2 bits prefetch-pipelined architecture.  Data strobe (DQS) both for read and write are available for high speed and reliable  data  bus  design.    By  setting  extended  mode register, the on-chip Delay Locked Loop (DLL) can be set  enable  or  disable.    This  module  provides  high density  mounting  without  utilizing  surface  mount technology.    Decoupling  capacitors  are  mounted beside each TSOP on the module board.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Fans, Thermal Management
Discrete Semiconductor Products
Undefined Category
Batteries, Chargers, Holders
View more