Features: • 19 dBm Output Power• 17 dB Small Signal Gain• 0.8 dB Noise Figure• 37 dBm IP3• Bias 3.3V, 110mADescriptionThis evaluation board is a single-ended, dual biased, power amplifier. It is reactively matched at a frequency of 1.85 GHz. The active device is a Fil...
EB750SOT343BA: Features: • 19 dBm Output Power• 17 dB Small Signal Gain• 0.8 dB Noise Figure• 37 dBm IP3• Bias 3.3V, 110mADescriptionThis evaluation board is a single-ended, dual bias...
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This evaluation board is a single-ended, dual biased, power amplifier. It is reactively matched at a frequency of 1.85 GHz. The active device is a Filtronic FP750SOT343; a double-heterojunction, 750 µm gate periphery PHEMT. The connectors are SMA jacks soldered to a 30 mil thick FR4 PC Board. Both RF ports are DC-decoupled.
Biasing can be applied through test clips (E-Z hooks) at the bias vias on the bottom of the board. A negative gate voltage is required for current limiting. Ground connection should be established prior to the gate and drain bias connections. This FP750SOT343 board is thin and flexible, so caution should be exercised when connecting it to coaxial cables.