| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> Nominal Frequency | 1.544MHz to 44.736MHz |
The specified reference or "center" frequency of the oscillator. Typically specified in megahertz (MHz)or kilohertz (kHz). |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
| Frequency Stability | | vs. Operating Temperature Range: | per Operating Temperature Ranges vs. Frequency Stabilities table below | | 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> | | vs. Input Voltage (VDD ±5%): | ±0.3ppm Maximum | | 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> | | vs. Load (±2pF): | ±0.2ppm Maximum | |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> Operating Temperature Range | per Operating Temperature Ranges vs. Frequency Stabilities table below |
The maximum and minimum temperatures that the oscillator device can be exposed to during oscillation. Over thistemperature range, all of the specified device operatingparameters are guaranteed. |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> Supply Voltage (VDD) | 5.0VDC ±5% |
The DC input voltage necessary for oscillator operation, specified involts. |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> Input Current | 20mA Maximum |
The amount of current consumption by an oscillator from the powersupply, typically specified in milliamps (mA). |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> Output Voltage Logic High (VOH) | 2.4VDC Minimum with TTL Load
VDD-0.5VDC Minimum with HCMOS Load |
Defined as the Output Voltage Logic High or "Logic 1" (Figure 1 in oscillator glossary of terms). |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> Output Voltage Logic Low (VOL) | 0.4VDC Maximum with TTL load
0.5VDC Maximum with HCMOS load |
Defined as the Output Voltage Logic Low or "Logic 0" (Figure 1 in oscillator glossary of terms). |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> Duty Cycle | 50 ±10(%) measured at 1.4VDC with TTL load or 50% of waveform with HCMOS load |
The measure of output waveform uniformity. This term, also referredto as symmetry, is a measurement of the time that the outputwaveform is in a logic high state, expressed as a percentage (%).This parameter is measured at a specified voltage threshold or at apercentage of the output waveform amplitude (Figure 1 in the oscillator glossary of terms). |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> Rise Time/Fall Time | 10nSec Maximum measured over 0.4VDC to 2.4VDC with TTL load or from 20% to 80% of waveform with HCMOS load. |
The Rise Time, measured in nanoseconds (nSec), is defined as thetransition time from an output logic low to an output logic high.Conversely, the Fall Time, also measured in nanoseconds (nSec), isdefined as the transition time from an output logic high to an outputlogic low. This transition time is measured at specified voltagethresholds or at specified percentages of the output waveformamplitude (Figure 1 in the oscillator glossary of terms). |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> Load Drive Capability | 10 TTL or 15pF HCMOS Load Maximum |
The maximum load the oscillator can drive specified in terms of thenumber of gates or the type of load circuit (Figures 2, 3 and 4 in oscillator glossary of terms). |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> Aging (at 25°C) | ±1ppm/year Maximum |
The systematic change in frequency with time due to internal changes in the crystal. Aging is often expressed as a maximum value in parts per million per year (ppm/yr). The rate of aging is typically greatest during the first 30 to 60 days after which time the aging rate decreases. The following factors effect crystal aging: adsorption and desorption of contamination on the surfaces of the quartz, stress relief of the mounting and bonding structures, material outgassing, and seal integrity. |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> Storage Temperature | -40°C to +85°C |
The minimum and maximum temperatures that the device can be stored or exposed to when in a non-oscillation state. After exposing or storing the device at the minimum or maximum temperatures for a length of time, all of the operating specifications are guaranteed over the specified Operating Temperature Range. |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
| Control Voltage (External) | 2.5VDC ±2.0VDC, Positive Transfer Characteristic. |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
| Frequency Deviation | ±7ppm Minimum, ±20ppm Maximum over Control Voltage (VC)
Referenced to F0 at VC=2.5VDC; VDD=5.0VDC |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
| Internal Trim (Top of Can) | ±3ppm Minimum |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
| Typical Phase Noise | -70dBc/Hz at 10Hz offset
-100dBc/Hz at 100Hz offset
-130dBc/Hz at 1kHz offset
-140dBc/Hz at 10kHz offset
-145dBc/Hz at 100kHz offset |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
| Input Impedance | 10kOhms Typical |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
| Modulation Bandwidth | 10kHz Minimum measured at -3dB, VC=2.5VDC |
| 640){this.height=this.height*640/this.width;this.width=640;}' border="0" alt=" Connection Diagram"> |
EB51F3 Data Sheet
