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EB200P70-AJ

Features: • 20 dBm Output Power (P1dB)• 17 dB Gain at 5.8 GHz• 0.7 dB Noise Figure at 5.8 GHz• 30 dBm Output IP3• 45% Power-Added Efficiency• Useable Gain to 26 GHzApplication• LNAs and Driver Amplifiers to 26GHz• VCOs and Frequency DoublersSpecifica...

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EB200P70-AJ: Features: • 20 dBm Output Power (P1dB)• 17 dB Gain at 5.8 GHz• 0.7 dB Noise Figure at 5.8 GHz• 30 dBm Output IP3• 45% Power-Added Efficiency• Useable Gain to 26 G...

EB200P70-AJ Data Sheet

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Part Number:
EB200P70-AJ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 20 dBm Output Power (P1dB)
• 17 dB Gain at 5.8 GHz
• 0.7 dB Noise Figure at 5.8 GHz
• 30 dBm Output IP3
• 45% Power-Added Efficiency
• Useable Gain to 26 GHz


Application

• LNAs and Driver Amplifiers to 26GHz
• VCOs and Frequency Doublers


Specifications

PARAMETER SYMBOL TEST CONDITIONS ABSOLUTE MAXIMUM
Drain-Source Voltage VDS -3V < VGS < -0.5V 8V
Gate-Source Voltage VGS 0V < VDS < +8V -3V
Drain-Source Current IDS For VDS > 2V IDSS
Gate Current IG Forward or reverse current 5mA
RF Input Power2 PIN Under any acceptable bias state 16dBm
Channel Operating Temperature TGH Under any acceptable bias state 175°C
Storage Temperature TSTG Non-Operating Storage -40°C to 150°C
Total Power Dissipation PTOT See De-Rating Note below 470mW
Simultaneous Combination of Limits4   2 or more Max. Limi 80%
1TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device
2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
4Total Power Dissipation defined as: PTOT (PDC + PIN) POUT,
where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 0.47 - (1/RJC) x TPACK
where TPACK= source tab lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 65°C carrier temperature: PTOT = 470mW (3 x (65 22)) = 341mW


Description

The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 200 mm Schottky barrier Gate, defined by high-resolution stepper-based photolithography.




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