Features: • Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolation• Low drain to tab capacitance(<25pF)• Low RDS (on) HDMOSTM process• Rugged polysilicon gate cell structure• Unclamped Inductive S...
E153432: Features: • Silicon chip on Direct-Copper-Bond substrate- High power dissipation- Isolated mounting surface- 2500V electrical isolation• Low drain to tab capacitance(<25pF)• Low...
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